Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Number Of Elements
- 2
- Çalışma Sıcaklığı
- 150°C TJ
- Rise Time
- 525ns
- Kurşunsuz
- Lead Free
- Number Of Channels
- 2
- Fet Type
- 2 N-Channel (Dual) Common Drain
- Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- Kurşunsuz Kodu
- yes
- ECCN Kodu
- EAR99
- Parça Durumu
- Active
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Ambalaj
- Tape & Reel (TR)
- Operating Mode
- ENHANCEMENT MODE
- Terminal Sayısı
- 8
- Drain To Source Voltage Vdss
- 24V
- Fabrika Tedarik Süresi
- 17 Weeks
- Pulsed Drain Currentmax Idm
- 60A
- Turn On Delay Time
- 545 ns
- Transistor Application
- SWITCHING
- Montaj Tipi
- Surface Mount
- Gate Charge Qg Max Vgs
- 13nC @ 4.5V
- Drainsource On Resistancemax
- 0.0091Ohm
- Fet Feature
- Logic Level Gate, 2.5V Drive
- Kılıf / Paket
- 8-SMD, Flat Lead
- RoHS Durumu
- ROHS3 Compliant
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pin Sayısı
- 8
- Turn Off Delay Time
- 18.65 μs
- Drain To Source Breakdown Voltage
- 24V
- Radyasyon Dayanımı
- No
- Rds On Max Id Vgs
- 7m Ω @ 5A, 4.5V
- Contact Plating
- Tin
- Fall Time Typ
- 22.2 μs
- Yayın Yılı
- 2015
- JESD-609 Kodu
- e6
- Max Power Dissipation
- 1.4W
- Continuous Drain Current Id
- 14A
- Montaj
- Surface Mount
- Pin Sayısı
- 8
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