ECH8659-TL-W

Specifications

Parça Durumu

Active

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ambalaj

Tape & Reel (TR)

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

710pF @ 10V

Terminal Sayısı

8

Drain To Source Voltage Vdss

30V

REACH Uyumluluk Kodu

not_compliant

Drain Currentmax Abs Id

7A

Yüzey Montaj

YES

Vgsth Max Id

2.6V @ 1mA

Fabrika Tedarik Süresi

23 Weeks

Pulsed Drain Currentmax Idm

40A

Number Of Elements

2

Ds Breakdown Voltagemin

30V

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Çalışma Sıcaklığı

150°C TJ

Kurşunsuz

Lead Free

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Type

2 N-Channel (Dual)

Kurşunsuz Kodu

yes

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Rds On Max Id Vgs

24m Ω @ 3.5A, 10V

Yayın Yılı

2017

Additional Feature

ESD PROTECTED

JESD-609 Kodu

e6

Max Power Dissipation

1.3W

Continuous Drain Current Id

7A

Power Max

1.3W

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Application

SWITCHING

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

11.8nC @ 10V

Terminal Kaplaması

Tin/Bismuth (Sn/Bi)

Fet Feature

Logic Level Gate, 4V Drive

Drainsource On Resistancemax

0.024Ohm

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

8-SMD, Flat Lead

Nem Hassasiyeti (MSL)

1 (Unlimited)