ECH8601M-TL-H

Specifications

JESD-609 Kodu

e6

Gate To Source Voltage Vgs

12V

Pin Sayısı

8

Max Power Dissipation

1.5W

Continuous Drain Current Id

8A

Current Continuous Drain Id25

8A Ta

Rds On Max Id Vgs

23m Ω @ 4A, 4.5V

Yayın Yılı

2012

Fall Time Typ

1.8 μs

RoHS Durumu

RoHS Compliant

Kılıf / Paket

8-SMD, Flat Lead

Terminal Kaplaması

Tin/Bismuth (Sn/Bi)

Fet Feature

Logic Level Gate, 2.5V Drive

Drainsource On Resistancemax

0.03Ohm

Radyasyon Dayanımı

No

Turn Off Delay Time

3 μs

Pin Sayısı

8

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Turn On Delay Time

300 ns

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

7.5nC @ 4.5V

Element Configuration

Dual

Yüzey Montaj

YES

Drain To Source Voltage Vdss

24V

Drain Currentmax Abs Id

8A

Pulsed Drain Currentmax Idm

60A

Vgsth Max Id

1.3V @ 1mA

Ambalaj

Tape & Reel (TR)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Parça Durumu

Obsolete

ECCN Kodu

EAR99

Yükseklik

900μm

Terminal Sayısı

8

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Fet Type

2 N-Channel (Dual) Common Drain

Ds Breakdown Voltagemin

24V

Number Of Elements

2

Transistor Element Material

SILICON