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DAP222T1G

ON Semiconductor

DAP222T1G

Rectifier Diode Array

RoHS: Compliant

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Specifications

Kurşunsuz Kodu
yes
Voltage Forward Vf Max If
1.2V @ 100mA
JESD-609 Kodu
e3
Reverse Recovery Time
10 ns
Peak Reverse Current
100nA
Applications
GENERAL PURPOSE
Yüzey Montaj
YES
Pin Sayısı
3
Speed
Small Signal =< 200mA (Io), Any Speed
Genişlik
900μm
Power Dissipation
150mW
ECCN Kodu
EAR99
Terminal Formu
GULL WING
Akım Değeri
100mA
Diode Element Material
SILICON
Pin Sayısı
3
RoHS Durumu
ROHS3 Compliant
Radyasyon Dayanımı
No
Current Reverse Leakage Vr
100nA @ 70V
Forward Current
100mA
Operating Temperature Junction
150°C Max
Fabrika Tedarik Süresi
8 Weeks
Max Reverse Leakage Current
100nA
Max Surge Current
2A
Min. Çalışma Sıcaklığı
-55°C
Tepe Reflow Süresi (maks. sn)
40
Current Average Rectified Io
100mA DC
Terminal Sayısı
3
Tepe Reflow Sıcaklığı (°C)
260
Yükseklik
800μm
Output Currentmax
0.1A
Diode Type
Standard
Temel Parça No
DAP222
Element Configuration
Common Anode
Voltage Rated Dc
80V
HTS Kodu
8541.10.00.70
Kılıf / Paket
SC-75, SOT-416
Average Rectified Current
100mA
Max Reverse Voltage Dc
80V
Number Of Phases
1

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