Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2009
- Number Of Elements
- 1
- Max Power Dissipation
- 350mW
- Terminal Formu
- THROUGH-HOLE
- Akım Değeri
- 7mA
- HTS Kodu
- 8541.21.00.75
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Tepe Reflow Sıcaklığı (°C)
- 240
- Transistor Type
- N-Channel JFET
- Gain
- 11dB
- Gate To Source Voltage Vgs
- -30V
- Power Dissipation
- 350mW
- REACH Uyumluluk Kodu
- not_compliant
- Ambalaj
- Bulk
- Voltage Rated Dc
- -30V
- Terminal Pozisyonu
- BOTTOM
- Frekans
- 800MHz
- RoHS Durumu
- Non-RoHS Compliant
- JESD-609 Kodu
- e0
- Operating Temperature Max
- 150°C
- Element Configuration
- Single
- Qualification Status
- Not Qualified
- Kurşunsuz
- Contains Lead
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Operating Mode
- DEPLETION MODE
- Continuous Drain Current Id
- 3mA
- Temel Parça No
- BF256
- Parça Durumu
- Obsolete
- Fet Technology
- JUNCTION
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Sayısı
- 3
- Pin Sayısı
- 3
- Pin Sayısı
- 3
- Yüzey Montaj
- NO
- Lifecycle Status
- OBSOLETE (Last Updated: 3 days ago)
- Drain To Source Breakdown Voltage
- 30V
- Tepe Reflow Süresi (maks. sn)
- 30
- Transistor Element Material
- SILICON
- Kurşunsuz Kodu
- no
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