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Same-day dispatch from stock
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RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Collectoremitter Saturation Voltage
- -650mV
- Radyasyon Dayanımı
- No
- Yükseklik
- 950μm
- Reference Standard
- AEC-Q101
- Transistor Application
- AMPLIFIER
- Current Collector Cutoff Max
- 15nA ICBO
- Gain Bandwidth Product
- 100MHz
- Uzunluk
- 2.08mm
- Power Dissipation
- 380mW
- Collector Base Voltage Vcbo
- 80V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collectoremitter Breakdown Voltage
- 65V
- Transistor Type
- 2 PNP (Dual)
- Number Of Elements
- 2
- Ambalaj
- Tape & Reel (TR)
- Parça Durumu
- Active
- JESD-609 Kodu
- e3
- Kurşunsuz
- Lead Free
- Akım Değeri
- -100mA
- Voltage Rated Dc
- -65V
- Yüzey Montaj
- YES
- Frekans
- 100MHz
- Max Breakdown Voltage
- 65V
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Yayın Yılı
- 2005
- Terminal Formu
- GULL WING
- Kurşunsuz Kodu
- yes
- Max Collector Current
- 100mA
- Fabrika Tedarik Süresi
- 8 Weeks
- Vce Saturation Max Ib Ic
- 650mV @ 5mA, 100mA
- Polarity
- PNP
- Max Power Dissipation
- 380mW
- ECCN Kodu
- EAR99
- Emitter Base Voltage Vebo
- -5V
- Pin Sayısı
- 6
- Terminal Kaplaması
- Tin (Sn)
- Collector Emitter Voltage Vceo
- 65V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Montaj Tipi
- Surface Mount
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