Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yükseklik
- 1.1mm
- Radyasyon Dayanımı
- No
- Collectoremitter Saturation Voltage
- 600mV
- Transistor Element Material
- SILICON
- Uzunluk
- 2.2mm
- Gain Bandwidth Product
- 100MHz
- Current Collector Cutoff Max
- 15nA ICBO
- Transistor Application
- AMPLIFIER
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collector Base Voltage Vcbo
- 30V
- Power Dissipation
- 380mW
- Collectoremitter Breakdown Voltage
- 30V
- JESD-609 Kodu
- e3
- Parça Durumu
- Active
- Ambalaj
- Tape & Reel (TR)
- Tepe Reflow Sıcaklığı (°C)
- 260
- Number Of Elements
- 2
- Transistor Type
- 2 NPN (Dual)
- Kurşunsuz
- Lead Free
- Max Breakdown Voltage
- 30V
- Frekans
- 100MHz
- Yüzey Montaj
- YES
- Voltage Rated Dc
- 30V
- Akım Değeri
- 100mA
- Yayın Yılı
- 2007
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Terminal Formu
- GULL WING
- Vce Saturation Max Ib Ic
- 600mV @ 5mA, 100mA
- Fabrika Tedarik Süresi
- 8 Weeks
- Max Collector Current
- 100mA
- Kurşunsuz Kodu
- yes
- Polarity
- NPN
- Emitter Base Voltage Vebo
- 5V
- ECCN Kodu
- EAR99
- Max Power Dissipation
- 380mW
- Contact Plating
- Tin
- Collector Emitter Voltage Vceo
- 30V
- Pin Sayısı
- 6
- Dc Current Gain Hfe Min Ic Vce
- 420 @ 2mA 5V
- Tepe Reflow Süresi (maks. sn)
- 40
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