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BAW56M3T5G

ON Semiconductor

BAW56M3T5G

Rectifier Diode Array

RoHS: Compliant

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Specifications

Yükseklik
550μm
Maks. Çalışma Sıcaklığı
150°C
Pin Sayısı
3
JESD-609 Kodu
e3
Power Dissipation
640mW
Radyasyon Dayanımı
No
Kurşunsuz Kodu
yes
Halogen Free
Halogen Free
Forward Current
200mA
Operating Temperature Junction
-55°C~150°C
Reverse Recovery Time
6 ns
Current Average Rectified Io
200mA DC
Nem Hassasiyeti (MSL)
1 (Unlimited)
Diode Configuration
1 Pair Common Anode
Yayın Yılı
2009
Max Reverse Leakage Current
2.5μA
Max Reverse Voltage Dc
75V
Terminal Sayısı
3
Current Reverse Leakage Vr
2.5μA @ 70V
Diode Element Material
SILICON
Diode Type
Standard
Fabrika Tedarik Süresi
2 Weeks
ECCN Kodu
EAR99
Ambalaj
Tape & Reel (TR)
Montaj Tipi
Surface Mount
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Genişlik
850μm
HTS Kodu
8541.10.00.70
Element Configuration
Common Anode
Speed
Small Signal =< 200mA (Io), Any Speed
Temel Parça No
BAW56
Forward Voltage
1.25V
Voltage Forward Vf Max If
1.25V @ 150mA
Uzunluk
1.25mm
Output Currentmax
0.2A
Terminal Formu
FLAT
Min. Çalışma Sıcaklığı
-55°C
RoHS Durumu
ROHS3 Compliant
Max Repetitive Reverse Voltage Vrrm
75V
Average Rectified Current
200mA

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