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55GN01MA-TL-E

ON Semiconductor

55GN01MA-TL-E

RF BJT Transistors

RoHS: Compliant

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Specifications

Montaj Tipi
Surface Mount
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Polaritychannel Type
NPN
Genişlik
2.1mm
Ambalaj
Tape & Reel (TR)
Pin Sayısı
3
RoHS Durumu
ROHS3 Compliant
Dc Current Gain Hfe Min Ic Vce
100 @ 10mA 5V
Yayın Yılı
2011
Gain
10dB @ 1GHz
Yükseklik
900μm
Collector Base Voltage Vcbo
20V
Emitter Base Voltage Vebo
3V
Uzunluk
2mm
Max Power Dissipation
400mW
Frequency Transition
4.5GHz~5.5GHz
Collectoremitter Breakdown Voltage
10V
Kurşunsuz Kodu
yes
Terminal Kaplaması
Tin/Bismuth (Sn/Bi)
Kurşunsuz
Lead Free
Noise Figure Db Typ F
1.9dB @ 1GHz
Pin Sayısı
3
Kılıf / Paket
SC-70, SOT-323
Element Configuration
Single
Max Collector Current
70mA
Yüzey Montaj
YES
Transition Frequency
3000MHz
Collector Emitter Voltage Vceo
10V
Transistor Type
NPN
Hfemin
200
Çalışma Sıcaklığı
150°C TJ
JESD-609 Kodu
e6
ECCN Kodu
EAR99
Parça Durumu
Active
Nem Hassasiyeti (MSL)
1 (Unlimited)
Max Frequency
5.5GHz
Fabrika Tedarik Süresi
2 Weeks

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