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55GN01FA-TL-H

ON Semiconductor

55GN01FA-TL-H

RF BJT Transistors

RoHS: Compliant

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Specifications

Dc Current Gain Hfe Min Ic Vce
100 @ 10mA 5V
Yayın Yılı
2012
Gain
11dB ~ 19dB @ 1GHz ~ 400MHz
Pin Sayısı
3
RoHS Durumu
ROHS3 Compliant
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Polaritychannel Type
NPN
Ambalaj
Tape & Reel (TR)
Montaj Tipi
Surface Mount
Max Power Dissipation
250mW
Emitter Base Voltage Vebo
3V
Collector Base Voltage Vcbo
20V
Terminal Kaplaması
Tin/Bismuth (Sn/Bi)
Collectoremitter Breakdown Voltage
10V
Kurşunsuz Kodu
yes
Frequency Transition
4.5GHz~5.5GHz
Yüzey Montaj
YES
Max Collector Current
70mA
Kılıf / Paket
SC-81
Kurşunsuz
Lead Free
Pin Sayısı
3
Noise Figure Db Typ F
1.9dB @ 1GHz
Collector Emitter Voltage Vceo
10V
Transition Frequency
3000MHz
Frekans
5.5GHz
Number Of Elements
1
Power Dissipation
250mW
Transistor Type
NPN
Configuration
Single
Halogen Free
Halogen Free
Çalışma Sıcaklığı
150°C TJ
Fabrika Tedarik Süresi
7 Weeks
Nem Hassasiyeti (MSL)
1 (Unlimited)
Parça Durumu
Active
JESD-609 Kodu
e6
ECCN Kodu
EAR99

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