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55GN01CA-TB-E

ON Semiconductor

55GN01CA-TB-E

RF BJT Transistors

RoHS: Compliant

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Specifications

Collectoremitter Breakdown Voltage
10V
Kurşunsuz Kodu
yes
Terminal Kaplaması
Tin/Bismuth (Sn/Bi)
Kurşunsuz
Lead Free
Pin Sayısı
3
Noise Figure Db Typ F
1.9dB @ 1GHz
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Gain Bandwidth Product
4.5 GHz
Element Configuration
Single
Max Collector Current
70mA
Yüzey Montaj
YES
Montaj Tipi
Surface Mount
Polaritychannel Type
NPN
Lifecycle Status
ACTIVE (Last Updated: 12 hours ago)
Genişlik
1.5mm
Ambalaj
Tape & Reel (TR)
RoHS Durumu
ROHS3 Compliant
Pin Sayısı
3
Gain
9.5dB
Yayın Yılı
2012
Dc Current Gain Hfe Min Ic Vce
100 @ 10mA 5V
Collector Base Voltage Vcbo
20V
Yükseklik
1.1mm
Emitter Base Voltage Vebo
3V
Uzunluk
2.9mm
Max Breakdown Voltage
10V
Terminal Pozisyonu
DUAL
Max Power Dissipation
200mW
Transistor Element Material
SILICON
Çalışma Sıcaklığı
150°C TJ
Terminal Formu
GULL WING
Power Max
200mW
JESD-609 Kodu
e6
ECCN Kodu
EAR99
Parça Durumu
Active
Nem Hassasiyeti (MSL)
1 (Unlimited)
Fabrika Tedarik Süresi
5 Weeks
Transistor Application
AMPLIFIER
Continuous Collector Current
5mA
Transition Frequency
5500MHz

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