4N30

Specifications

Forward Current

80(mA)

Kılıf / Paket

6-DIP (0.300, 7.62mm)

Voltage Forward Vf Typ

1.2V

Number Of Channels

1

JESD-609 Kodu

e3

Temel Parça No

4N30

Current Transfer Rationom

100

Power Dissipation

0.25(W)

Operating Temp Range

-55C to 100C

Package Type

PDIP

Montaj Tipi

Through Hole

Configuration

SINGLE WITH BUILT-IN DIODE

Isolation Voltagemax

1500

Transistor Element Material

SILICON

Collector Emitter Voltage Vceo

55V

Polaritychannel Type

N-CHANNEL

Output Device

Darlington With Base

Fabrika Tedarik Süresi

20 Weeks

Mounting

Through Hole

Voltage Isolation

5300Vrms

Polarity

NPN

Max Input Current

60mA

Radyasyon Dayanımı

No

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yüzey Montaj

YES

Forward Currentmax

.06

Ds Breakdown Voltagemin

300V

Terminal Formu

GULL WING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

Max Power Dissipation

200mW

Operating Temperature Classification

Industrial

ECCN Kodu

EAR99

Çıkış Tipi

Darlington with Base

Çalışma Sıcaklığı

-55°C~100°C

Turn On Turn Off Time Typ

5μs, 40μs (Max)

Operating Mode

ENHANCEMENT MODE

Qualification Status

Not Qualified

Terminal Kaplaması

Tin (Sn)

Current Dc Forward If Max

80mA