4N25TM

Specifications

Vce Saturation Max

500mV

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

GULL WING

Ds Breakdown Voltagemin

250V

Case Connection

DRAIN

Current Dc Forward If Max

60mA

Current Transfer Ratiomin

20% @ 10mA

Qualification Status

Not Qualified

Terminal Kaplaması

Tin (Sn)

Turn On Turn Off Time Typ

2μs, 2μs

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-40°C~100°C

Çıkış Tipi

Transistor with Base

ECCN Kodu

EAR99

Jesd30 Code

R-PSSO-G2

Giriş Tipi

DC

Voltage Isolation

7500Vpk

Drain Currentmax Abs Id

44A

Parça Durumu

Obsolete

Yüzey Montaj

YES

Kurşunsuz Kodu

yes

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Polaritychannel Type

N-CHANNEL

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Drainsource On Resistancemax

0.069Ohm

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Additional Feature

FAST SWITCHING

Terminal Sayısı

2

Power Dissipationmax Abs

307W

Avalanche Energy Rating Eas

2055 mJ

Voltage Forward Vf Typ

1.18V

Number Of Channels

1

Kılıf / Paket

6-DIP (0.400, 10.16mm)

Terminal Pozisyonu

SINGLE

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Through Hole