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Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate To Source Voltage Vgs
- 8V
- Yayın Yılı
- 2006
- Current Test
- 10mA
- Power Dissipation
- 200mW
- Number Of Elements
- 1
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Frekans
- 200MHz
- JESD-609 Kodu
- e6
- Maks. Çalışma Sıcaklığı
- 125°C
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- ECCN Kodu
- EAR99
- Min. Çalışma Sıcaklığı
- -55°C
- Drain Currentmax Abs Id
- 0.03A
- Noise Figure
- 2.2dB
- Pin Sayısı
- 4
- Gain
- 23dB
- Transistor Type
- N-Channel Dual Gate
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Contact Plating
- Tin
- Yüzey Montaj
- YES
- Parça Durumu
- Obsolete
- Ambalaj
- Tape & Reel (TR)
- Akım Değeri
- 30mA
- Element Configuration
- Dual
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Voltage Test
- 6V
- Kurşunsuz Kodu
- yes
- Continuous Drain Current Id
- 30mA
- Max Power Dissipation
- 200mW
- RoHS Durumu
- RoHS Compliant
- Kurşunsuz
- Lead Free
- Kılıf / Paket
- TO-253-4, TO-253AA
- Drain To Source Voltage Vdss
- 15V
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