2SK3850-E

Specifications

Maximum Continuous Drain Current A

0.7

Category

Power MOSFET

Maximum Power Dissipation Mw

1000

Typical Input Capacitance Vds Pf

96@20V

Typical Turnon Delay Time Ns

9

Maximum Drain Source Resistance Mohm

18500@10V

Configuration

Single Dual Drain

Eccn Us

EAR99

Channel Mode

Enhancement

Typical Rise Time Ns

11

Maximum Operating Temperature C

150

Parça Durumu

Obsolete

Maximum Gate Source Leakage Current Na

100

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

600

Typical Turnoff Delay Time Ns

16

Typical Fall Time Ns

50

Maximum Gate Threshold Voltage V

3.5

Minimum Operating Temperature C

-55

Typical Gate Charge Vgs Nc

4@10V

Material

Si

Eu Rohs

Supplier Unconfirmed

Channel Type

N

Typical Gate Charge10v Nc

4

Hts

8541.21.00.95

Maximum Idss Ua

100

Maximum Gate Source Voltage V

±30