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2SC5551AF-TD-E

ON Semiconductor

2SC5551AF-TD-E

RF BJT Transistors

RoHS: Compliant

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Specifications

Ambalaj
Tape & Reel (TR)
Montaj Tipi
Surface Mount
Transistor Type
NPN
Parça Durumu
Active
Power Dissipation
1.3W
RoHS Durumu
ROHS3 Compliant
Collector Base Voltage Vcbo
40V
Kurşunsuz Kodu
yes
Collector Emitter Voltage Vceo
30V
Yükseklik
1.5mm
Kılıf / Paket
TO-243AA
Genişlik
2.5mm
Çalışma Sıcaklığı
150°C TJ
Polaritychannel Type
NPN
Terminal Sayısı
3
Fabrika Tedarik Süresi
6 Weeks
Yayın Yılı
2009
Terminal Kaplaması
Tin/Bismuth (Sn/Bi)
Max Collector Current
300mA
Dc Current Gain Hfe Min Ic Vce
135 @ 50mA 5V
Number Of Elements
1
Element Configuration
Single
Max Power Dissipation
1.3W
JESD-609 Kodu
e6
Kurşunsuz
Lead Free
Pin Sayısı
3
Collectorbase Capacitancemax
4pF
Continuous Collector Current
300mA
Pin Sayısı
3
Transistor Element Material
SILICON
Nem Hassasiyeti (MSL)
1 (Unlimited)
Terminal Formu
FLAT
Collectoremitter Saturation Voltage
300mV
Max Frequency
3.5GHz
Emitter Base Voltage Vebo
2V
Yüzey Montaj
YES
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Collectoremitter Breakdown Voltage
30V
Max Breakdown Voltage
30V
Uzunluk
4.5mm

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