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2SC5551AE-TD-E

ON Semiconductor

2SC5551AE-TD-E

RF BJT Transistors

RoHS: Compliant

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RoHS

Compliant

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Specifications

Kurşunsuz
Lead Free
Max Power Dissipation
1.3W
Frekans
3.5GHz
JESD-609 Kodu
e6
Gain Bandwidth Product
3.5 GHz
Collectorbase Capacitancemax
4pF
Pin Sayısı
3
Transistor Element Material
SILICON
Pin Sayısı
3
Collectoremitter Saturation Voltage
300mV
Terminal Formu
FLAT
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collectoremitter Breakdown Voltage
30V
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Yüzey Montaj
YES
Emitter Base Voltage Vebo
2V
Transition Frequency
3500MHz
ECCN Kodu
EAR99
Case Connection
COLLECTOR
Parça Durumu
Active
Transistor Type
NPN
Montaj Tipi
Surface Mount
Ambalaj
Tape & Reel (TR)
RoHS Durumu
ROHS3 Compliant
Power Dissipation
1.3W
Collector Base Voltage Vcbo
40V
Collector Emitter Voltage Vceo
30V
Kurşunsuz Kodu
yes
Çalışma Sıcaklığı
150°C TJ
Polaritychannel Type
NPN
Kılıf / Paket
TO-243AA
Terminal Sayısı
3
Dc Current Gain Hfe Min Ic Vce
90 @ 50mA 5V
Max Collector Current
300mA
Yayın Yılı
2009
Terminal Kaplaması
Tin/Bismuth (Sn/Bi)
Fabrika Tedarik Süresi
7 Weeks
Element Configuration
Single
Number Of Elements
1

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