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2SC5347AF-TD-E

ON Semiconductor

2SC5347AF-TD-E

RF BJT Transistors

RoHS: Compliant

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Specifications

ECCN Kodu
EAR99
Collectoremitter Breakdown Voltage
12V
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 2 days ago)
Emitter Base Voltage Vebo
2V
Hfemin
60
Noise Figure Db Typ F
1.8dB @ 1GHz
Nem Hassasiyeti (MSL)
1 (Unlimited)
Pin Sayısı
3
Gain Bandwidth Product
4.7 GHz
Pin Sayısı
3
Kurşunsuz
Lead Free
Max Power Dissipation
1.3W
JESD-609 Kodu
e6
Element Configuration
Single
Number Of Elements
1
Max Collector Current
150mA
Dc Current Gain Hfe Min Ic Vce
135 @ 50mA 5V
Terminal Kaplaması
Tin/Bismuth (Sn/Bi)
Yayın Yılı
2012
Fabrika Tedarik Süresi
17 Weeks
Çalışma Sıcaklığı
150°C TJ
Kılıf / Paket
TO-243AA
Gain
8dB
Collector Emitter Voltage Vceo
12V
Kurşunsuz Kodu
yes
Collector Base Voltage Vcbo
20V
RoHS Durumu
ROHS3 Compliant
Power Dissipation
1.3W
Currentcollector Ic Max
150mA
Transistor Type
NPN
Parça Durumu
Active
Montaj Tipi
Surface Mount
Ambalaj
Tape & Reel (TR)

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