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2SC5347AE-TD-E

ON Semiconductor

2SC5347AE-TD-E

RF BJT Transistors

RoHS: Compliant

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Specifications

Nem Hassasiyeti (MSL)
1 (Unlimited)
Pin Sayısı
3
Pin Sayısı
3
Kurşunsuz
Lead Free
Max Power Dissipation
1.3W
JESD-609 Kodu
e6
ECCN Kodu
EAR99
Uzunluk
4.5mm
Max Breakdown Voltage
12V
Collectoremitter Breakdown Voltage
12V
Emitter Base Voltage Vebo
2V
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 2 days ago)
Max Frequency
4.7GHz
Noise Figure Db Typ F
1.8dB @ 1GHz
Collector Emitter Voltage Vceo
12V
Yükseklik
1.5mm
Gain
8dB
Kurşunsuz Kodu
yes
Collector Base Voltage Vcbo
20V
RoHS Durumu
ROHS3 Compliant
Parça Durumu
Active
Transistor Type
NPN
Ambalaj
Tape & Reel (TR)
Montaj Tipi
Surface Mount
Element Configuration
Single
Frequency Transition
4.7GHz
Max Collector Current
150mA
Dc Current Gain Hfe Min Ic Vce
90 @ 50mA 5V
Fabrika Tedarik Süresi
7 Weeks
Yayın Yılı
2008
Terminal Kaplaması
Tin/Bismuth (Sn/Bi)
Çalışma Sıcaklığı
150°C TJ
Kılıf / Paket
TO-243AA
Genişlik
2.5mm

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