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2SC5226A-4-TL-E

ON Semiconductor

2SC5226A-4-TL-E

RF BJT Transistors

RoHS: Compliant

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Specifications

Gain Bandwidth Product
7 GHz
Pin Sayısı
3
Collectorbase Capacitancemax
1.2pF
Kurşunsuz
Lead Free
JESD-609 Kodu
e6
Max Power Dissipation
150mW
Terminal Formu
GULL WING
Nem Hassasiyeti (MSL)
1 (Unlimited)
Pin Sayısı
3
Transistor Element Material
SILICON
Terminal Pozisyonu
DUAL
Collectoremitter Breakdown Voltage
10V
Emitter Base Voltage Vebo
2V
Yüzey Montaj
YES
Additional Feature
LOW NOISE
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Max Frequency
7GHz
Noise Figure Db Typ F
1dB @ 1GHz
Transition Frequency
7000MHz
ECCN Kodu
EAR99
Highest Frequency Band
ULTRA HIGH FREQUENCY B
Uzunluk
2mm
Max Breakdown Voltage
10V
RoHS Durumu
ROHS3 Compliant
Transistor Type
NPN
Parça Durumu
Active
Ambalaj
Tape & Reel (TR)
Montaj Tipi
Surface Mount
Collector Emitter Voltage Vceo
10V
Gain
12dB
Yükseklik
900μm
Contact Plating
Tin
Kurşunsuz Kodu
yes
Collector Base Voltage Vcbo
20V
Terminal Sayısı
3
Çalışma Sıcaklığı
150°C TJ
Polaritychannel Type
NPN
Kılıf / Paket
SC-70, SOT-323
Genişlik
1.25mm
Number Of Elements
1

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