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15GN03CA-TB-E

ON Semiconductor

15GN03CA-TB-E

RF BJT Transistors

RoHS: Compliant

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Specifications

Frequency Transition
1.5GHz
Kurşunsuz
Lead Free
RoHS Durumu
ROHS3 Compliant
Collector Base Voltage Vcbo
20V
Gain
13dB @ 0.4GHz
ECCN Kodu
EAR99
Noise Figure Db Typ F
1.6dB @ 0.4GHz
Hfemin
100
Max Collector Current
70mA
Yayın Yılı
2012
Fabrika Tedarik Süresi
9 Weeks
Parça Durumu
Active
Transistor Type
NPN
Collector Emitter Voltage Vceo
10V
Pin Sayısı
3
Max Power Dissipation
200mW
Emitter Base Voltage Vebo
3V
JESD-609 Kodu
e6
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Montaj Tipi
Surface Mount
Power Max
200mW
Collectoremitter Breakdown Voltage
10V
Pin Sayısı
3
Terminal Kaplaması
Tin/Bismuth (Sn/Bi)
Çalışma Sıcaklığı
150°C TJ
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Ambalaj
Tape & Reel (TR)
Dc Current Gain Hfe Min Ic Vce
100 @ 10mA 5V
Kurşunsuz Kodu
yes
Nem Hassasiyeti (MSL)
1 (Unlimited)

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