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15GN01MA-TL-E

ON Semiconductor

15GN01MA-TL-E

RF BJT Transistors

RoHS: Compliant

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Specifications

Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Terminal Kaplaması
Tin/Bismuth (Sn/Bi)
Pin Sayısı
3
Nem Hassasiyeti (MSL)
1 (Unlimited)
Configuration
Single
Çalışma Sıcaklığı
150°C TJ
Kılıf / Paket
3-SMD, Gull Wing
Ambalaj
Tape & Reel (TR)
Kurşunsuz Kodu
yes
Dc Current Gain Hfe Min Ic Vce
200 @ 10mA 5V
Montaj Tipi
Surface Mount
Power Max
400mW
Collectoremitter Breakdown Voltage
8V
JESD-609 Kodu
e6
Lifecycle Status
LIFETIME (Last Updated: 1 week ago)
Max Collector Current
50mA
Fabrika Tedarik Süresi
4 Weeks
Yüzey Montaj
YES
Yayın Yılı
2011
Hfemin
200
Emitter Base Voltage Vebo
3V
Max Power Dissipation
400mW
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Transition Frequency
1000MHz
Parça Durumu
Obsolete
Transistor Type
NPN
Pin Sayısı
3
Collector Emitter Voltage Vceo
8V
Polaritychannel Type
NPN
Frequency Transition
1.5GHz
Kurşunsuz
Lead Free
Collector Base Voltage Vcbo
15V
RoHS Durumu
RoHS Compliant
ECCN Kodu
EAR99

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