Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pin Sayısı
- 16
- Vgs Gatesource Voltage
- - 20 V, + 20 V
- Montaj Stili
- Through Hole
- Fabrika Paket Adedi
- 12
- Transistor Polarity
- N-Channel
- Channel Mode
- Enhancement
- Continuous Drain Current Id
- 26A
- Voltage Isolation
- 5000Vrms
- Kılıf / Paket
- 16-SSIP Exposed Pad, Formed Leads
- RoHS
- Details
- Paket
- Tube
- Akım
- 26 A
- Qg Gate Charge
- 79.7 nC
- Gerilim
- 650 V
- Vds Drainsource Breakdown Voltage
- 650 V
- Seri
- Automotive, AEC-Q101
- Power Dissipation
- 126W
- Maks. Çalışma Sıcaklığı
- + 125 C
- Vgs Th Gatesource Threshold Voltage
- 5 V
- Number Of Channels
- 4 Channel
- Id Continuous Drain Current
- 26 A
- Rds On Drainsource Resistance
- 82 mOhms
- Package Type
- APMCA-A16
- Configuration
- H-Bridge
- Number Of Elements Per Chip
- 4
- Pd Power Dissipation
- 126 W
- Technology
- Si
- Montaj Tipi
- Through Hole
- Ürün Tipi
- MOSFET
- Ambalaj
- Tube
- Minimum Operating Temperature
- - 40 C
- Channel Type
- N Channel
- Tip
- MOSFET
- Ürün Durumu
- Active
Related Products
Infineon
1SD210F2FZ600R65KF1NPSA1
Power Driver Modules
Infineon
1SP0335V2M145NPSA1
Power Driver Modules
Infineon
1SP0335V2M165NPSA1
Power Driver Modules
Infineon Technologies
2PS13512E43W43079NOSA1
Power Driver Modules
Infineon
2SC0108T2H017HPSA1
Power Driver Modules
Infineon
2SC0435T2F117HPSA1
Power Driver Modules
Infineon
2SC0435T2F117HPSA3
Power Driver Modules
Infineon
2SC0535T2A133NPSA1
Power Driver Modules