Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgsth Max Id
- 4.3V @ 20mA
- Current Continuous Drain Id25
- 51A (Tc)
- Ürün Tipi
- Discrete Semiconductor Modules
- Montaj Tipi
- Chassis Mount
- Channel Type
- Dual N Channel
- Paket
- Tray
- Ambalaj
- Tray
- Çalışma Sıcaklığı
- -40°C ~ 150°C (TJ)
- Power Dissipation
- 119W
- Ürün Durumu
- Active
- Input Capacitance Ciss Max Vds
- 2420pF @ 800V
- Maks. Çalışma Sıcaklığı
- + 150 C
- Montaj Stili
- Press Fit
- Tip
- Half Bridge Module
- Fet Feature
- Silicon Carbide (SiC)
- Vgs Gatesource Voltage
- - 15 V, + 25 V
- Rds On Max Id Vgs
- 30mOhm @ 50A, 20V
- Power Max
- 119W (Tj)
- Fet Type
- 2 N-Channel (Dual) Common Source
- Drain To Source Voltage Vdss
- 1200V (1.2kV)
- Technology
- SiC
- Fabrika Paket Adedi
- 28
- Continuous Drain Current Id
- 51A
- Gate Charge Qg Max Vgs
- 213.5nC @ 20V
- Kılıf / Paket
- Module
- Minimum Operating Temperature
- - 40 C
- Vr Reverse Voltage
- 1200 V
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