NXH010P90MNF1PG

Specifications

Fet Feature

Silicon Carbide (SiC)

Kılıf / Paket

Module

Gate Charge Qg Max Vgs

546.4nC @ 15V

Input Capacitance Ciss Max Vds

7007pF @ 450V

Fabrika Paket Adedi

28

Ürün Durumu

Active

Çalışma Sıcaklığı

-40°C ~ 150°C (TJ)

Ambalaj

Tray

Drain To Source Voltage Vdss

900V

Fet Type

2 N-Channel (Dual) Common Source

Power Max

328W (Tj)

Montaj Tipi

Chassis Mount

Rds On Max Id Vgs

14mOhm @ 100A, 15V

Ürün Tipi

Discrete Semiconductor Modules

Current Continuous Drain Id25

154A (Tc)

Vgsth Max Id

4.3V @ 40mA