NVMYS4D6N06CTWG

Specifications

Number Of Terminals

4

Manufacturer Package Code

760AB

Package Style

SMALL OUTLINE

Avalanche Energy Rating Eas

524 mJ

Fabrika Tedarik Süresi

4 Weeks

Jesd30 Code

R-PSSO-G4

Operating Mode

ENHANCEMENT MODE

Package Shape

RECTANGULAR

Operating Temperaturemin

-55 °C

Pulsed Drain Currentmax Idm

565 A

Transistor Element Material

SILICON

Power Dissipationmax Abs

79.5 W

Package Body Material

PLASTIC/EPOXY

Configuration

SINGLE WITH BUILT-IN DIODE

Ds Breakdown Voltagemin

60 V

Drainsource On Resistancemax

0.0047 Ω

Number Of Elements

1

Drain Currentmax Id

92 A

Kurşunsuz Kodu

Yes

Operating Temperaturemax

175 °C

Feedback Capmax Crss

7 pF

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Yüzey Montaj

YES

Part Life Cycle Code

Active

Case Connection

DRAIN

Moisture Sensitivity Levels

1

Reference Standard

AEC-Q101

Terminal Formu

GULL WING

Polaritychannel Type

N-CHANNEL

Terminal Kaplaması

Matte Tin (Sn) - annealed

Terminal Pozisyonu

SINGLE

JESD-609 Kodu

e3