NVH4L040N120SC1

Specifications

Seri

NVH

Birim Ağırlık

0.211644 oz

Id Continuous Drain Current

58 A

Drain To Source Voltage Vdss

1200 V

Power Dissipation

319

Qg Gate Charge

106 nC

Tedarikçi Cihaz Paketi

TO-247-4L

Input Capacitance Ciss Max Vds

1762 pF @ 800 V

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Rds On Max Id Vgs

56mOhm @ 35A, 20V

Continuous Drain Current Id

58

Ürün Tipi

MOSFET

Pd Power Dissipation

319 W

RoHS

Details

Vgs Th Gatesource Threshold Voltage

4.3 V

Transistor Polarity

N-Channel

Number Of Elements Per Chip

1

Temel Ürün No

NVH4L040

Rds On Drainsource Resistance

56 mOhms

Drive Voltage Max Rds On Min Rds On

20V

Vds Drainsource Breakdown Voltage

1.2 kV

Power Dissipation Max

319W (Tc)

Minimum Operating Temperature

- 55 C

Ürün Durumu

Active

Channel Type

N

Paket

Tube

Maks. Çalışma Sıcaklığı

+ 175 C

Gate Charge Qg Max Vgs

106 nC @ 20 V

Pin Sayısı

4

Vgs Gatesource Voltage

- 15 V, + 25 V

Number Of Channels

1 Channel

Montaj Stili

Through Hole

Vgsth Max Id

4.3V @ 10mA

Technology

SiC

Channel Mode

Enhancement

Current Continuous Drain Id25

58A (Tc)

Kılıf / Paket

TO-247-4

Vgs Max

+25V, -15V

Fet Type

N-Channel