NTD5807NG

Specifications

Operating Temperaturemax

175 °C

REACH Uyumluluk Kodu

compliant

Manufacturer Package Code

CASE 369D-01

ECCN Kodu

EAR99

Drain Currentmax Id

23 A

Ds Breakdown Voltagemin

40 V

Qualification Status

Not Qualified

Pin Sayısı

3

Part Life Cycle Code

Obsolete

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Polaritychannel Type

N-CHANNEL

Case Connection

DRAIN

Package Description

IN-LINE, R-PSIP-T3

Package Style

IN-LINE

Rohs Code

Yes

Ihs Manufacturer

ON SEMICONDUCTOR

Avalanche Energy Rating Eas

29.4 mJ

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

45 A

Terminal Formu

THROUGH-HOLE

Transistor Application

SWITCHING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipationmax Abs

33 W

Configuration

SINGLE WITH BUILT-IN DIODE

Number Of Elements

1

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Package Body Material

PLASTIC/EPOXY

Jesd30 Code

R-PSIP-T3

Drainsource On Resistancemax

0.031 Ω

Number Of Terminals

3

Package Shape

RECTANGULAR

Yüzey Montaj

NO