NTBL048N60S5H

Specifications

Transistor Element Material

SILICON

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

ECCN Kodu

EAR99

Moisture Sensitivity Levels

1

Polaritychannel Type

N-CHANNEL

JESD-609 Kodu

e3

Operating Temperaturemin

-55 °C

Jesd30 Code

R-PSSO-F8

Avalanche Energy Rating Eas

478 mJ

Yüzey Montaj

YES

Power Dissipationmax Abs

297 W

Ds Breakdown Voltagemin

600 V

Number Of Terminals

8

Package Shape

RECTANGULAR

Terminal Formu

FLAT

Drainsource On Resistancemax

0.048 Ω

Pulsed Drain Currentmax Idm

175 A

Manufacturer Package Code

100DC

Case Connection

DRAIN

Kurşunsuz Kodu

Yes

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Id

50 A

Terminal Pozisyonu

SINGLE

Package Style

SMALL OUTLINE

Package Body Material

PLASTIC/EPOXY

Transistor Application

SWITCHING

Part Life Cycle Code

Active

Number Of Elements

1

Operating Temperaturemax

150 °C

Terminal Kaplaması

Matte Tin (Sn) - annealed