NTB75N03-06T4G

Specifications

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

SINGLE WITH BUILT-IN DIODE

Additional Feature

AVALANCHE RATED

ECCN Kodu

EAR99

Polaritychannel Type

N-CHANNEL

Moisture Sensitivity Levels

1

Rohs Code

Yes

Power Dissipationmax Abs

125 W

Yüzey Montaj

YES

Jesd30 Code

R-PDSO-G2

Ihs Manufacturer

ON SEMICONDUCTOR

Avalanche Energy Rating Eas

1500 mJ

Number Of Terminals

2

Ds Breakdown Voltagemin

30 V

Pin Sayısı

3

Terminal Formu

GULL WING

Package Shape

RECTANGULAR

Pulsed Drain Currentmax Idm

225 A

Drainsource On Resistancemax

0.0065 Ω

Case Connection

DRAIN

Manufacturer Package Code

CASE 418AA-01

Operating Mode

ENHANCEMENT MODE

Package Description

SMALL OUTLINE, R-PDSO-G2

REACH Uyumluluk Kodu

compliant

Package Body Material

PLASTIC/EPOXY

Package Style

SMALL OUTLINE

Terminal Pozisyonu

DUAL

Drain Currentmax Id

75 A

Number Of Elements

1

Operating Temperaturemax

150 °C

Transistor Application

SWITCHING

Part Life Cycle Code

Obsolete