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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Min. Çalışma Sıcaklığı
- -55 °C
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 625 mW
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Transition Frequencynom Ft
- 50 MHz
- Collector Base Voltage Vcbo
- 300 V
- Package Body Material
- PLASTIC/EPOXY
- Transistor Application
- AMPLIFIER
- Frekans
- 50 MHz
- Ürün Durumu
- Obsolete
- Terminal Formu
- THROUGH-HOLE
- Currentcollector Ic Max
- 500mA
- Maks. Çalışma Sıcaklığı
- 150 °C
- ECCN Kodu
- EAR99
- Element Configuration
- Single
- Package Description
- CYLINDRICAL, O-PBCY-T3
- Power Dissipation
- 625 mW
- Part Life Cycle Code
- Obsolete
- RoHS
- Compliant
- Dc Current Gain Hfe Min Ic Vce
- 40 @ 30mA, 10V
- Üretici Parça No
- KSP42ATA
- Montaj Tipi
- Through Hole
- Frequency Transition
- 50MHz
- Collector Emitter Voltage Vceo
- 300 V
- Collectoremitter Saturation Voltage
- 500 mV
- Polarity
- NPN
- Yüzey Montaj
- NO
- Terminal Pozisyonu
- BOTTOM
- Collectoremitter Voltagemax
- 300 V
- Risk Rank
- 5.36
- Vce Saturation Max Ib Ic
- 500mV @ 2mA, 20mA
- Hfemin
- 25
- Transistor Type
- NPN
- Number Of Elements
- 1
- Collector Currentmax Ic
- 0.5 A
- Power Max
- 625mW
- Jedec95 Code
- TO-92
- Montaj
- Through Hole
- Tedarikçi Cihaz Paketi
- TO-92-3
- Qualification Status
- Not Qualified