FGHL75T65MQDT

Specifications

Td Onoff25c

24ns/118ns

Technology

Si

Ürün Durumu

Active

Collectoremitter Saturation Voltage

1.45V

Switching Energy

2.35mJ (on), 1.25mJ (off)

Gate Charge

149 nC

Currentcollector Ic Max

80 A

Maximum Gate Emitter Voltage

20V

Maks. Çalışma Sıcaklığı

+ 175 C

Tedarikçi Cihaz Paketi

TO-247-3

Voltage Collector Emitter Breakdown Max

650 V

Igbt Type

Trench Field Stop

Paket

Tube

Giriş Tipi

Standard

Package Type

TO-247-3L

Reverse Recovery Time Trr

107 ns

Maximum Collector Emitter Voltage

650 V

Montaj Tipi

Through Hole

Pd Power Dissipation

375 W

Power Max

375 W

Minimum Operating Temperature

- 55 C

Test Conditions

400V, 75A, 4.7Ohm, 15V

Montaj Stili

Through Hole

Current Collector Pulsed Icm

300 A

Collector Emitter Voltage Vceo Max

650 V

Vceon Max Vge Ic

1.8V @ 15V, 75A

Kılıf / Paket

TO-247-3

Ürün Tipi

IGBT Transistors

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Power Dissipation

375W

Fabrika Paket Adedi

30

Continuous Collector Current At25 C

80 A

Continuous Collector Current

80A

Configuration

Single