Volume pricing
- 1+ pcs$4.64
- 10+ pcs$4.38
- 100+ pcs$4.13
- 500+ pcs$3.90
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Collector Emitter Voltage Vceo Max
- 650 V
- Vceon Max Vge Ic
- 1.8V @ 15V, 40A
- Kılıf / Paket
- TO-247-3
- Ürün Tipi
- IGBT Transistors
- Çalışma Sıcaklığı
- -55°C ~ 175°C (TJ)
- Fabrika Paket Adedi
- 30
- Power Dissipation
- 268W
- Configuration
- Single
- Continuous Collector Current
- 80
- Continuous Collector Current At25 C
- 80 A
- Minimum Operating Temperature
- - 55 C
- Montaj Stili
- Through Hole
- Test Conditions
- 400V, 50A, 6Ohm, 15V
- Current Collector Pulsed Icm
- 200 A
- Tedarikçi Cihaz Paketi
- TO-247-3
- Voltage Collector Emitter Breakdown Max
- 650 V
- Igbt Type
- Trench Field Stop
- Paket
- Tube
- Maximum Collector Emitter Voltage
- 650 V
- Reverse Recovery Time Trr
- 79 ns
- Giriş Tipi
- Standard
- Package Type
- TO-247-3L
- Pd Power Dissipation
- 268 W
- Montaj Tipi
- Through Hole
- Power Max
- 268 W
- Td Onoff25c
- 21ns/90ns
- Technology
- Si
- Switching Energy
- 1.19mJ (on), 630μJ (off)
- Collectoremitter Saturation Voltage
- 1.45V
- Ürün Durumu
- Active
- Gate Charge
- 99 nC
- Maks. Çalışma Sıcaklığı
- + 175 C
- Maximum Gate Emitter Voltage
- 20V
- Currentcollector Ic Max
- 80 A
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