AFGHL40T65SQ

Specifications

Collector Emitter Voltage Vceo Max

650 V

Voltage Collector Emitter Breakdown Max

650 V

Continuous Collector Current

80

Channel Type

N

Temel Ürün No

AFGHL40

Td Onoff25c

15ns/70ns

Maximum Gate Emitter Voltage

±30.0V

Ürün Durumu

Active

Igbt Type

Trench Field Stop

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Pin Sayısı

3

Power Dissipation

239

Currentcollector Ic Max

80 A

Switching Energy

250μJ (on), 90μJ (off)

Vceon Max Vge Ic

2.1V @ 15V, 40A

Pd Power Dissipation

239 W

Seri

Automotive, AEC-Q101

Test Conditions

400V, 20A, 6Ohm, 15V

Tedarikçi Cihaz Paketi

TO-247-3

Kılıf / Paket

TO-247-3

Paket

Tube

Montaj Tipi

Through Hole

Package Type

TO-247

Gate Charge

68 nC

Collectoremitter Saturation Voltage

1.6

Fabrika Paket Adedi

30

Current Collector Pulsed Icm

160 A

Technology

Si

Configuration

Single

Maximum Collector Emitter Voltage

650 V

Giriş Tipi

Standard

Ürün Tipi

IGBT Transistors

Maks. Çalışma Sıcaklığı

+ 175 C

Minimum Operating Temperature

- 55 C

Power Max

239 W

Continuous Collector Current At25 C

80 A

Montaj Stili

Through Hole

RoHS

Details