AFGHL30T65RQDN

Specifications

Gate Charge

37 nC

Fabrika Paket Adedi

30

Collectoremitter Saturation Voltage

1.57 V

Paket

Tube

Montaj Tipi

Through Hole

Ambalaj

Tube

Current Collector Pulsed Icm

120 A

Technology

Si

Configuration

Single

Maks. Çalışma Sıcaklığı

+ 175 C

Ürün Tipi

IGBT Transistors

Giriş Tipi

Standard

Minimum Operating Temperature

- 55 C

Power Max

230.8 W

Continuous Collector Current At25 C

42 A

Montaj Stili

Through Hole

Voltage Collector Emitter Breakdown Max

650 V

Collector Emitter Voltage Vceo Max

650 V

Temel Ürün No

AFGHL30

Continuous Collector Current

42

Ürün Durumu

Active

Maximum Gate Emitter Voltage

- 20 V, + 20 V

Igbt Type

Field Stop

Td Onoff25c

18ns/68ns

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Reverse Recovery Time Trr

39 ns

Currentcollector Ic Max

42 A

Switching Energy

340μJ (on), 320μJ (off)

Vceon Max Vge Ic

1.82V @ 15V, 30A

Test Conditions

400V, 15A, 2.5Ohm, 15V

Kılıf / Paket

TO-247-3

Tedarikçi Cihaz Paketi

TO-247-3

Pd Power Dissipation

230.8 W

Seri

Automotive, AEC-Q101