2N7002DW-G

Specifications

Pd Power Dissipation

200 mW

Tedarikçi Cihaz Paketi

SC-88/SC70-6/SOT-363

Technology

Si

Fet Type

2 N-Channel (Dual)

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Ambalaj

Cut Tape

Forward Transconductance Min

80 mS

Fabrika Paket Adedi

3000

Vds Drainsource Breakdown Voltage

60 V

Vgs Gatesource Voltage

- 20 V, + 20 V

Input Capacitance Ciss Max Vds

50pF @ 25V

Transistor Polarity

N-Channel

Drain To Source Voltage Vdss

60V

Vgs Th Gatesource Threshold Voltage

2 V

Montaj Stili

SMD/SMT

Channel Mode

Enhancement

Current Continuous Drain Id25

115mA (Ta)

Vgsth Max Id

2V @ 250μA

Rds On Max Id Vgs

2Ohm @ 500mA, 10V

Minimum Operating Temperature

- 55 C

Ürün Durumu

Active

Temel Ürün No

2N7002

Ürün Tipi

MOSFET

Power Max

200mW (Ta)

Rds On Drainsource Resistance

7.5 Ohms

Configuration

Dual

Montaj Tipi

Surface Mount

Number Of Channels

2 Channel

RoHS

Details

Birim Ağırlık

0.000265 oz

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Typical Turnoff Delay Time

12.5 ns

Id Continuous Drain Current

115 mA

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Turnon Delay Time

5.85 ns

Fet Feature

Standard

Transistor Type

2 N-Channel