EE-SX1140

Specifications

Sensing Method

Through-Beam

Reverse Voltage Dc

4V

Genişlik

5mm

Montaj Tipi

Through Hole

Number Of Channels

1

Output Configuration

Phototransistor

Algılama Mesafesi

0.551 (14mm)

Reverse Breakdown Voltage

4V

Max Power Dissipation

100mW

Tip

Unamplified

Collector Emitter Voltage Vceo

30V

Pin Sayısı

4

Max Collector Current

20mA

Parça Durumu

Active

Power Dissipation

100mW

Rise Time

4μs

Çalışma Sıcaklığı

-25°C~85°C

Forward Voltage

1.2V

Collectoremitter Breakdown Voltage

30V

Body Length Or Diameter

23mm

Wavelength Peak

940 nm

RoHS Durumu

RoHS Compliant

Montaj

Through Hole

Yayın Yılı

2003

Max Output Current

20mA

Fall Time Typ

4 μs

Nem Hassasiyeti (MSL)

Not Applicable

Ambalaj

Bulk

Response Time

4μs, 4μs

Kurşunsuz Kodu

yes

Fabrika Tedarik Süresi

9 Weeks

Kılıf / Paket

PCB Mount

Reach Svhc

Unknown

Input Current

50mA

Forward Current

50mA

Output Current

20mA