Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj Tipi
- Surface Mount
- Vgsth Max Id
- 1V @ 250μA
- Power Max
- 900mW
- Yayın Yılı
- 1997
- Terminal Kaplaması
- NICKEL PALLADIUM GOLD
- Terminal Formu
- GULL WING
- Transistor Application
- SWITCHING
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Qualification Status
- Not Qualified
- Çalışma Sıcaklığı
- 150°C TJ
- Nem Hassasiyeti (MSL)
- 2 (1 Year)
- Terminal Sayısı
- 8
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Yüzey Montaj
- YES
- Ambalaj
- Tape & Reel (TR)
- Seri
- TrenchMOS™
- Drain To Source Voltage Vdss
- 30V
- Pin Sayısı
- 8
- Temel Parça No
- SI9936
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Fet Type
- 2 N-Channel (Dual)
- Ds Breakdown Voltagemin
- 30V
- ECCN Kodu
- EAR99
- Number Of Elements
- 2
- Rds On Max Id Vgs
- 50m Ω @ 5A, 10V
- JESD-609 Kodu
- e4
- Jesd30 Code
- R-PDSO-G8
- Gate Charge Qg Max Vgs
- 35nC @ 10V
- Pulsed Drain Currentmax Idm
- 40A
- Drainsource On Resistancemax
- 0.05Ohm
- Jedec95 Code
- MS-012AA
- Current Continuous Drain Id25
- 5A
- Operating Mode
- ENHANCEMENT MODE
- Parça Durumu
- Obsolete
- Transistor Element Material
- SILICON
- Fet Feature
- Logic Level Gate
- Drain Currentmax Abs Id
- 5A
- RoHS Durumu
- ROHS3 Compliant
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