Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- 2 N-Channel (Dual)
- Parça Durumu
- Obsolete
- Operating Mode
- ENHANCEMENT MODE
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Fet Feature
- Logic Level Gate
- Ds Breakdown Voltagemin
- 20V
- Pin Sayısı
- 8
- Montaj Tipi
- Surface Mount
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- REACH Uyumluluk Kodu
- unknown
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 30m Ω @ 3.5A, 4.5V
- Qualification Status
- Not Qualified
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Vgsth Max Id
- 700mV @ 1mA
- Power Max
- 3.1W
- Yüzey Montaj
- YES
- Input Capacitance Ciss Max Vds
- 1366pF @ 16V
- Number Of Elements
- 2
- Jesd30 Code
- R-PDSO-G8
- Drain To Source Voltage Vdss
- 20V
- Terminal Sayısı
- 8
- Yayın Yılı
- 2005
- Transistor Application
- SWITCHING
- RoHS Durumu
- ROHS3 Compliant
- ECCN Kodu
- EAR99
- Drainsource On Resistancemax
- 7800Ohm
- Gate Charge Qg Max Vgs
- 23.6nC @ 4.5V
- Seri
- TrenchMOS™
- Ambalaj
- Tape & Reel (TR)
- Jedec95 Code
- MO-153AB
- Drain Currentmax Abs Id
- 5.2A
- Kılıf / Paket
- 8-TSSOP (0.173, 4.40mm Width)
- Transistor Element Material
- SILICON
- Terminal Formu
- GULL WING
- Current Continuous Drain Id25
- 7.8A
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