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RoHS
Compliant
Support
Technical team support
Specifications
- Input Capacitance Ciss Max Vds
- 18.5pF @ 5V
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Power Max
- 200mW
- Gate Charge Qg Max Vgs
- 0.35nC @ 4.5V
- Fet Type
- 2 N-Channel (Dual)
- Power Dissipationmax Abs
- 0.2W
- Drain Currentmax Abs Id
- 0.125A
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Formu
- GULL WING
- Drain To Source Voltage Vdss
- 30V
- Drainsource On Resistancemax
- 8Ohm
- Rds On Max Id Vgs
- 8 Ω @ 10mA, 4V
- Transistor Element Material
- SILICON
- Pin Sayısı
- 6
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Number Of Elements
- 2
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Jesd30 Code
- R-PDSO-G6
- Ambalaj
- Tape & Reel (TR)
- Seri
- TrenchMOS™
- Current Continuous Drain Id25
- 125mA
- Fet Feature
- Logic Level Gate
- Ds Breakdown Voltagemin
- 30V
- Yüzey Montaj
- YES
- JESD-609 Kodu
- e3
- Parça Durumu
- Obsolete
- Yayın Yılı
- 1997
- RoHS Durumu
- ROHS3 Compliant
- HTS Kodu
- 8541.21.00.95
- Qualification Status
- Not Qualified
- Transistor Application
- SWITCHING
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- ECCN Kodu
- EAR99
- Vgsth Max Id
- 1.5V @ 100μA
- Terminal Sayısı
- 6
- Terminal Kaplaması
- Tin (Sn)
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