PBLS4001V,115

Specifications

Qualification Status

Not Qualified

Dc Current Gain Hfe Min Ic Vce

30 @ 20mA 5V / 150 @ 100mA 2V

ECCN Kodu

EAR99

Yayın Yılı

2009

Additional Feature

BUILT IN BIAS RESISTOR RATIO 1

Ambalaj

Tape & Reel (TR)

Operating Temperature Max

150°C

Transistor Application

SWITCHING

Yüzey Montaj

YES

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Obsolete

Transistor Type

1 NPN Pre-Biased, 1 PNP

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

6

Jesd30 Code

R-PDSO-F6

Power Max

300mW

Terminal Formu

FLAT

Vce Saturation Max Ib Ic

150mV @ 500μA, 10mA / 350mV @ 50mA, 500mA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Currentcollector Ic Max

100mA 500mA

Power Dissipationmax Abs

0.3W

Frequency Transition

300MHz

Transistor Element Material

SILICON

Number Of Elements

2

Resistor Base R1

2.2k Ω

Polaritychannel Type

PNP

Resistor Emitter Base R2

2.2k Ω

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Temel Parça No

PBLS4001

Terminal Kaplaması

Tin (Sn)

Voltage Collector Emitter Breakdown Max

50V 40V

Montaj Tipi

Surface Mount

Kılıf / Paket

SOT-563, SOT-666

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e3

Current Collector Cutoff Max

1μA

Pin Sayısı

6

Transition Frequency

300MHz