PBLS2001S,115

Specifications

Transistor Type

1 NPN Pre-Biased, 1 PNP

Parça Durumu

Obsolete

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Jesd30 Code

R-PDSO-G8

Terminal Sayısı

8

Power Max

1.5W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

GULL WING

Vce Saturation Max Ib Ic

150mV @ 500μA, 10mA / 355mV @ 300mA, 3A

Qualification Status

Not Qualified

Dc Current Gain Hfe Min Ic Vce

30 @ 20mA 5V / 150 @ 2A 2V

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 1

ECCN Kodu

EAR99

Yayın Yılı

2009

Yüzey Montaj

YES

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tape & Reel (TR)

Operating Temperature Max

150°C

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

HTS Kodu

8541.21.00.95

Terminal Pozisyonu

DUAL

Current Collector Cutoff Max

1μA 100nA

JESD-609 Kodu

e4

Transition Frequency

100MHz

Pin Sayısı

8

Frequency Transition

100MHz

Currentcollector Ic Max

100mA 3A

Power Dissipationmax Abs

1.5W

Polaritychannel Type

NPN AND PNP

Transistor Element Material

SILICON

Turn Off Timemax Toff

205ns

Number Of Elements

2

Resistor Base R1

2.2k Ω

Resistor Emitter Base R2

2.2k Ω

Temel Parça No

PBLS2001

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Montaj Tipi

Surface Mount

Turn On Timemax Ton

41ns