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Same-day dispatch from stock
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RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Usage Level
- Military grade
- Terminal Sayısı
- 4
- Transistor Type
- LDMOS (Dual)
- Power Dissipationmax Abs
- 1052W
- Nem Hassasiyeti (MSL)
- Not Applicable
- Frekans
- 860MHz
- Ambalaj
- Tape & Reel (TR)
- Operating Mode
- ENHANCEMENT MODE
- Fabrika Tedarik Süresi
- 10 Weeks
- Terminal Formu
- FLAT
- Temel Parça No
- MRFE6VP8600
- Tepe Reflow Süresi (maks. sn)
- 40
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Gain
- 19.3dB
- Number Of Elements
- 2
- Voltage Test
- 50V
- Yayın Yılı
- 2011
- Jesd30 Code
- R-CDFP-F4
- Nominal Gerilim
- 130V
- RoHS Durumu
- ROHS3 Compliant
- Current Test
- 1.4A
- Qualification Status
- Not Qualified
- Case Connection
- SOURCE
- Configuration
- COMMON SOURCE, 2 ELEMENTS
- Yüzey Montaj
- YES
- Polaritychannel Type
- N-CHANNEL
- Power Output
- 125W
- Operating Temperature Max
- 150°C
- Tepe Reflow Sıcaklığı (°C)
- 260
- Kılıf / Paket
- NI-1230S
- HTS Kodu
- 8541.29.00.75
- Ds Breakdown Voltagemin
- 130V
- ECCN Kodu
- EAR99
- Transistor Application
- AMPLIFIER
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