BZV55C4V3

Specifications

Number Of Elements

1

Reference Voltagenom

4.3 V

Operating Temperaturemax

200 °C

Risk Rank

5.24

RoHS

Compliant

Number Of Terminals

2

Qualification Status

Not Qualified

Case Connection

ISOLATED

Package Shape

ROUND

Kurşunsuz Kodu

Yes

Tolerans

5 %

Maks. Çalışma Sıcaklığı

200 °C

Package Style

LONG FORM

Package Body Material

GLASS

Terminal Pozisyonu

END

Rohs Code

Yes

Power Dissipation Max

0.4 W

Polarity

UNIDIRECTIONAL

Working Test Current

5 mA

Part Life Cycle Code

Transferred

Dynamic Impedancemax

90 Ω

Operating Temperaturemin

-65 °C

Reach Svhc

No SVHC

Voltage Tolmax

5%

JESD-609 Kodu

e3

Reflow Temperaturemax S

40

Ambalaj

Cut Tape

Max Power Dissipation

500 mW

Üretici Parça No

BZV55-C4V3

Terminal Kaplaması

Tin (Sn)

Diode Element Material

SILICON

Pin Sayısı

2

Moisture Sensitivity Levels

1

Ihs Manufacturer

NXP SEMICONDUCTORS

Technology

ZENER

Jesd30 Code

O-LELF-R2

Diode Type

ZENER DIODE

Reverse Currentmax

3 µA

Terminal Formu

WRAP AROUND

Configuration

SINGLE