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C3 ChipZentronix
BFU590QX

NXP USA Inc.

BFU590QX

RF BJT Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

Terminal Pozisyonu
SINGLE
Frequency Transition
8GHz
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Terminal Sayısı
3
Montaj Tipi
Surface Mount
Temel Parça No
BFU590
Nem Hassasiyeti (MSL)
1 (Unlimited)
Transition Frequency
8000MHz
Transistor Element Material
SILICON
Voltage Collector Emitter Breakdown Max
12V
Highest Frequency Band
L B
Kılıf / Paket
TO-243AA
Ambalaj
Cut Tape (CT)
Power Max
2W
Terminal Formu
FLAT
Fabrika Tedarik Süresi
13 Weeks
Currentcollector Ic Max
200mA
Gain
6.5dB
Yayın Yılı
2011
Yüzey Montaj
YES
Dc Current Gain Hfe Min Ic Vce
60 @ 80mA 8V
Pin Sayısı
3
Transistor Type
NPN
Parça Durumu
Active
Number Of Elements
1
RoHS Durumu
ROHS3 Compliant
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Çalışma Sıcaklığı
-40°C~150°C TJ
Tepe Reflow Sıcaklığı (°C)
260
Reference Standard
AEC-Q101; IEC-60134
Jesd30 Code
R-PSSO-F3
Configuration
SINGLE
Polaritychannel Type
NPN

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