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C3 ChipZentronix
BFU590GX

NXP USA Inc.

BFU590GX

RF BJT Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

Yayın Yılı
2011
Gain
8dB
Fabrika Tedarik Süresi
13 Weeks
Currentcollector Ic Max
200mA
Ambalaj
Cut Tape (CT)
Power Max
2W
Çalışma Sıcaklığı
-40°C~150°C TJ
Kılıf / Paket
TO-261-4, TO-261AA
Voltage Collector Emitter Breakdown Max
12V
RoHS Durumu
ROHS3 Compliant
Temel Parça No
BFU590
Nem Hassasiyeti (MSL)
1 (Unlimited)
Montaj Tipi
Surface Mount
Parça Durumu
Active
Transistor Type
NPN
Frequency Transition
8.5GHz
Dc Current Gain Hfe Min Ic Vce
60 @ 80mA 8V

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