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BFU550WX

NXP USA Inc.

BFU550WX

RF BJT Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

Ambalaj
Tape & Reel (TR)
Power Max
450mW
Terminal Formu
GULL WING
Fabrika Tedarik Süresi
13 Weeks
Currentcollector Ic Max
50mA
Gain
18dB
Yayın Yılı
2011
Seri
Automotive, AEC-Q101
Transition Frequency
11000MHz
Transistor Element Material
SILICON
Voltage Collector Emitter Breakdown Max
12V
Highest Frequency Band
L B
Additional Feature
LOW NOISE
Kılıf / Paket
SC-70, SOT-323
Terminal Sayısı
3
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Montaj Tipi
Surface Mount
Temel Parça No
BFU550
Nem Hassasiyeti (MSL)
1 (Unlimited)
Terminal Pozisyonu
DUAL
Frequency Transition
11GHz
Jesd30 Code
R-PDSO-G3
Configuration
SINGLE
Polaritychannel Type
NPN
Transistor Application
AMPLIFIER
Çalışma Sıcaklığı
-40°C~150°C TJ
Tepe Reflow Sıcaklığı (°C)
260
Noise Figure Db Typ F
0.6dB @ 900MHz
Reference Standard
AEC-Q101; IEC-60134
Parça Durumu
Active
Number Of Elements
1
RoHS Durumu
ROHS3 Compliant
Yüzey Montaj
YES
Dc Current Gain Hfe Min Ic Vce
60 @ 15mA 8V
Pin Sayısı
3
Transistor Type
NPN

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