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C3 ChipZentronix
BFU550R

NXP USA Inc.

BFU550R

RF BJT Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

RoHS Durumu
ROHS3 Compliant
Temel Parça No
BFU550
Nem Hassasiyeti (MSL)
1 (Unlimited)
Montaj Tipi
Surface Mount
Parça Durumu
Active
Transistor Type
NPN
Dc Current Gain Hfe Min Ic Vce
60 @ 15mA 8V
Frequency Transition
11GHz
Yayın Yılı
2011
Gain
21dB
Currentcollector Ic Max
50mA
Fabrika Tedarik Süresi
13 Weeks
Ambalaj
Tape & Reel (TR)
Power Max
450mW
Çalışma Sıcaklığı
-40°C~150°C TJ
Kılıf / Paket
TO-253-4, TO-253AA
Tedarikçi Cihaz Paketi
SOT-143B
Noise Figure Db Typ F
0.7dB @ 900MHz
Seri
Automotive, AEC-Q101
Voltage Collector Emitter Breakdown Max
12V

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