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C3 ChipZentronix
BFU530WF

NXP USA Inc.

BFU530WF

RF BJT Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Kılıf / Paket
SC-70, SOT-323
Additional Feature
LOW NOISE
Highest Frequency Band
L B
Voltage Collector Emitter Breakdown Max
12V
Transistor Element Material
SILICON
Transition Frequency
11000MHz
Gain
12.5dB
Yayın Yılı
2011
Fabrika Tedarik Süresi
13 Weeks
Currentcollector Ic Max
40mA
Terminal Formu
GULL WING
Power Max
450mW
Ambalaj
Tape & Reel (TR)
Frequency Transition
11GHz
Terminal Pozisyonu
DUAL
Nem Hassasiyeti (MSL)
1 (Unlimited)
Temel Parça No
BFU530
Montaj Tipi
Surface Mount
Terminal Sayısı
3
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Noise Figure Db Typ F
1.1dB @ 1.8GHz
Reference Standard
AEC-Q101; IEC-60134
Çalışma Sıcaklığı
-40°C~150°C TJ
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Transistor Application
AMPLIFIER
Polaritychannel Type
NPN
Configuration
SINGLE
Jesd30 Code
R-PDSO-G3
Transistor Type
NPN
Pin Sayısı
3
Dc Current Gain Hfe Min Ic Vce
60 @ 10mA 8V
Yüzey Montaj
YES
RoHS Durumu
ROHS3 Compliant
Number Of Elements
1
Parça Durumu
Active

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