PSMN1R1-30BL

Specifications

Part Life Cycle Code

Active

Drainsource On Resistancemax

0.0011 Ω

Polaritychannel Type

N-CHANNEL

Ds Breakdown Voltagemin

30 V

Avalanche Energy Rating Eas

1900 mJ

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Qualification Status

Not Qualified

Ihs Manufacturer

NXP SEMICONDUCTORS

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

REACH Uyumluluk Kodu

unknown

Operating Mode

ENHANCEMENT MODE

Package Description

SMALL OUTLINE, R-PSSO-G2

Package Style

SMALL OUTLINE

Pulsed Drain Currentmax Idm

1456 A

Transistor Application

SWITCHING

Package Body Material

PLASTIC/EPOXY

Jesd30 Code

R-PSSO-G2

Case Connection

DRAIN

Yüzey Montaj

YES

Number Of Elements

1

Number Of Terminals

2

Operating Temperaturemax

175 °C

Drain Currentmax Id

120 A

Configuration

SINGLE WITH BUILT-IN DIODE

Package Shape

RECTANGULAR

Terminal Formu

GULL WING

Pin Sayısı

3

ECCN Kodu

EAR99